Starting from the bottom of the power chip, we root in material research and development, and continuously expand modules, drives, sensors/controls to create core competitiveness.
Starting from the application end, we provide customers with a full set of multi-functional customized solutions and continuously empower customer products.
650V/1200V dual voltage platforms have passed AEC-Q101 third-party automotive reliability certification (650V/10A, 1200V/20A).
The industry first proposed SiC X-FET chip architecture, innovatively avoiding SiC MOSFET trench gate oxide reliability.
Jointly developed ultra-thin SiC wafer thinning process, the number of single wafer cores ranked first in the industry.
The industry first proposed SiC JGBT chip architecture, tailored for series applications, single chip voltage can exceed 15kV.
The first company in the industry to mass produce double-sided heat dissipation packaged discrete devices (DSC-TOLL, DSC-TO247).
Possess internal insulation and copper clip interconnect packaging process technology.
The industry first proposed SiC JGBT chip architecture, tailored for series applications, single chip voltage can exceed 15kV.
The first mass-produced chip/system pressurized sintered copper paste in China (seCure-BC1113, seCure-BC0323).
The industry's first large-area copper sintering process applied to power modules (sintering area greater than 50mm*50mm).
The industry's first Tpack plastic-encapsulated module copper sintering application solution (benchmarked against Tesla's electric drive silver sintering solution).
The first in the industry to realize the full copper interconnection process for power modules (chip sintering, system sintering, chip copper interconnection).
Possess the ability to optimize customized design of power module packaging.
Possess material-chip-module-application system simulation and evaluation capabilities.
Based on electromagnetic isolation, the self-developed modulation and demodulation scheme is adopted to realize bidirectional transmission of control signals and fault signals.
The driver core integrates an independent isolated power supply, which is tailored for high-power modules, and the single-channel drive current can reach up to 30A.
The industry first proposed a three-level low-power driver chip architecture to further improve the operating frequency of SiC MOSFET.
The industry first proposed an ASIC driver core architecture to improve system integration while monitoring module working conditions in real time.
